Aluminum Oxynitride (AlON)
Nitride Global AlON Coatings
Aluminum Oxynitride in devices
Moving beyond ceramic substrates
Revolutionary thin film packaging for power and RF devices
Nitride Global AlON Characteristics
< 300 ℃
Low temperature deposition
Excellent VBD
up to 540 V/µm
High chemical etching resistance
7x > SiO2 from NF3
Thermal Conductivity
2 W/m-K – 30 W/m-K
Flexible but mechanically robust
Young’s Modulus of 210 Gpa
Very high reliability
> 1000 cycles @ -55℃ to 150℃
Suitable for high temp. applications
< 350 ℃
Dielectric Constant
11.3 at DC
Compatible CTE
3.9 ppm/℃
Current industry standard
”Die on DBC”
Nitride Global AlON concept
”Die on Heatsink”
An increase in efficiency in data transmission systems, high-powered electronics, and portable devices significantly reduces energy usage and greenhouse gas emissions.
Enables device performance breakthrough by providing a new type of thermal management and protective coating solution to the market. Emissions through more efficient electronics.
Nitride Global is the only company globally with the ability to apply extremely thin (5 - 20 µm) layers and at very low temperature.
Nitride Global offers coatings on copper, aluminum, aluminum nitride ceramics, graphite etc.